NTD4909N
PACKAGE DIMENSIONS
A1
L2
L1
E
E3
D
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD ? 01
ISSUE O
A
E2
D2
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOL D FLASH.
MILLIMETERS
T
SEATING
PLANE
b1
2X e
L
3X
b
0.13
M
T
A1
A2
E2
D2
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MIN MAX
2.19 2.38
0.46 0.60
0.87 1.10
0.69 0.89
0.77 1.10
5.97 6.22
4.80 ???
6.35 6.73
4.70 ???
4.45 5.46
2.28 BSC
3.40 3.60
??? 2.10
0.89 1.27
OPTIONAL
CONSTRUCTION
IPAK (STRAIGHT LEAD DPAK)
CASE 369D ? 01
ISSUE B
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
S
? T ?
SEATING
PLANE
F
1
G
4
2
3
A
K
J
D 3 PL
0.13 (0.005)
M
T
H
Z
DIM MIN MAX
A 0.235 0.245
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.018 0.023
F 0.037 0.045
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.180 0.215
S 0.025 0.040
V 0.035 0.050
Z 0.155 ???
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
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NTD4909N/D
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NTD4910N-35G 功能描述:MOSFET NFET DPAK 30V 37A 9.0MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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NTD4913N-1G 功能描述:MOSFET NFET DPAK 30V 32A 10.5MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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